Paper Sharing
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【Conference Papers】Nanocrystalline diamond-capped β-(AlₓGa₁₋ₓ)₂O₃/Ga₂O₃ heterostructure field-effect transistor
[ 2023-07-28 ] -
【Conference Papers】Enhancement-mode vertical (100) β-Ga₂O₃ FinFETs with an average breakdown strength of 2.7 MV/cm
[ 2023-07-28 ] -
【International Papers】Monolithic β-Ga₂O₃ NMOS IC based on heteroepitaxial E-mode MOSFETs
[ 2023-07-21 ] -
【International Papers】Taking Ga₂O₃ to the Next Level
[ 2023-07-21 ] -
【International Papers】Electrical Characteristics of in situ Mg-doped beta-Ga₂O₃ Current-Blocking Layer for Vertical Devices
[ 2023-07-21 ] -
【International Papers】Synergy of N and P Co-Doping on Improving Photocatalytic Hydrogen Production: A Case over Beta-Gallium Oxide
[ 2023-07-21 ] -
【Conference Papers】Over 0.9 GW/cm² multi kV-class fin-shape β-Ga₂O₃ power MESFETs
[ 2023-07-21 ] -
【Conference Papers】5.0 kV normally-off β-Ga₂O₃ FinFET with 42 μm-thick drift layer and HfO₂ gate insulator
[ 2023-07-21 ] -
【Conference Papers】Recent developments in gallium oxide device research at AFRL
[ 2023-07-21 ] -
【Conference Papers】Materials and Device Engineering for High-Performance Gallium Oxide Electronics
[ 2023-07-21 ]
