【Member News】Major Breakthrough! Fujia Gallium Attained 4-Inch VB Method Gallium Oxide Substrate with Excellent Performance and Launched a Crystal Growth Equipment

      Hangzhou Fujia Gallium Technology Co., LTD. (hereinafter referred to as Fujia Gallium) has made a major breakthrough in the field of Gallium Oxide crystal growth by Vertical Bridgman (VB) method. After testing the single crystal quality to reach the international advanced level, it is now simultaneously launching crystal growth equipment and process package to the market.

      With the strong support of high-precision thermal field simulation technology, the company successfully achieved 4-inch VB Gallium Oxide crystal growth in December 2024, and continued to upgrade the process and equipment, while carrying out ultra-smooth processing and characterization tests. The test results show that there are no twins in the 4-inch VB crystal grown by Fujia Gallium equipment, and the single crystal substrate XRD full width at half maxima (FWHM) is better than 50 arcsec, which is comparable to the Gallium Oxide single crystal substrate prepared by EFG method, and its performance has reached the international advanced level. Substrate surface roughness (Ra) is less than 0.2 nm, bending degree (Bow) is 1.8 μm, warping degree (warp) is 9.3 μm, total thickness deviation (TTV) is less than 10.0 μm, and relevant processing indicators meet the requirements of 4-inch Silicon Carbide substrate products.

FIG. 1 4-inch VB method Gallium Oxide substrate

Figure 2 XRD data of Gallium Oxide substrate by 4-inch VB method

FIG. 3 Roughness of 4-inch Gallium Oxide substrate by VB method

      Fujia Gallium has conducted several rounds of 2-4 inch VB Gallium Oxide crystal growth, constantly upgrading the performance of the equipment and verifying the stability of the growth equipment. The successful development of VB method equipment not only marks a major breakthrough in technological innovation, but also strongly confirms the forward-looking and correct development strategy of the company's adherence to the "process and equipment two-wheel drive", and is another milestone event after the company took the lead in breaking through the EFG method "One-Click Crystal Growth" technology in the world in May 2024 (click here for more information). The company now officially launched the VB method Gallium Oxide crystal growth equipment and supporting growth process package with independent intellectual property rights to accelerate the construction of industrial ecology in the field of Gallium Oxide and promote the vigorous development of the Gallium Oxide semiconductor industry.

FIG. 4 Equipment for Gallium Oxide crystal growth by VB method

      In the future, Fujia Gallium will continue to uphold the concept of innovation-driven development and prosperity of Gallium Oxide industry, constantly improve the level of equipment and process technology, and contribute more strength to the development of the industry.

About Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. The core products include Gallium Oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, Gallium Oxide crystal growth and processing equipment. The products mainly serve the fields of power devices, microwave and radio frequency, and optoelectronic detection.

      At present, the company has won a number of honors: In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium", and 3 software copyrights (crystal growth control software).

For more information about Hangzhou Fujia and its products

Please visit our official website: www.fujia-hiom.com

Or contact with Miss Guo :13164023887