Paper Sharing
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【Device Papers】E-mode p-channel GaN/AlGaN HFETs with κ-Ga₂O₃ as gate oxide
[ 2025-05-23 ] -
【Device Papers】Design, Simulation, and Comparison of p-GaN-based β-Ga₂O₃ FET on Wide Bandgap Substrates
[ 2025-05-23 ] -
【Domestic Papers】University of Science and Technology Beijing --- Ultrasensitive Deep-Ultraviolet Photodetectors Based On Band Engineering and Ferroelectric Modulation
[ 2025-05-22 ] -
【Domestic Papers】Harbin Institute of Technology Has Successfully Developed a Self-Driven Photodetector for Ga₂O₃/CdS Heterojunctions
[ 2025-05-22 ] -
【Member Papers】Fudan University---Over 1.2 GW/cm² β-Ga₂O₃ SBD with Vbr of 1.93 kV realized by O₂ plasma and annealing
[ 2025-05-22 ] -
【International Papers】Vertical p-GaN/n-Ga₂O₃ heterojunction diode with high switching performance
[ 2025-05-22 ] -
【Epitaxy Papers】Effect of substrate orientation on homoepitaxial β-Ga₂O₃ films grown by HVPE
[ 2025-05-21 ] -
【Epitaxy Papers】Enhancement of Photocatalytic Performance of Ga₂O₃ Films with Different Thicknesses Under UVC Light
[ 2025-05-21 ] -
【Epitaxy Papers】Tailoring annealing duration of gallium oxide film deposited by electron beam evaporation
[ 2025-05-21 ] -
【International Papers】High breakdown voltage normally off Ga₂O₃ transistors on silicon substrates using GaN buffer
[ 2025-05-20 ]
