Paper Sharing
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【Epitaxy Papers】Evolution of the below-bandgap anisotropic refractive indices and dielectric functions of β-(AlₓGa₁₋ₓ)₂O₃ (0 < x < 0.25) determined by generalized spectroscopic ellipsometry
[ 2026-04-08 ] -
【Device Papers】Vertical diodes on n-type β-Ga₂O₃ using p-Cu₂O for heterojunction formation and edge termination
[ 2026-04-08 ] -
【Member Papers】Review of Ga₂O₃ X-ray detectors: from material properties to device applications
[ 2026-04-07 ] -
【International Papers】Formation of GaN-Ga₂O₃ surface heterostructures via Femtosecond-laser-irradiation for sensitive and selective NO₂ sensing at elevated temperatures
[ 2026-04-07 ] -
【Domestic Papers】Tailoring Ga₂O₃ for solar-blind UV photodetectors: A comprehensive review of materials, techniques, and applications
[ 2026-04-07 ] -
【Member Papers】Insight Into the Performance Degradation of p-NiO/n-Ga₂O₃ Heterojunction Barrier Schottky Diode Under Forward Bias Stress
[ 2026-04-03 ] -
【Member Papers】Tunable electronic properties of κ-(Al, In)₂O₃/Ga₂O₃ digital alloys via superlattice design
[ 2026-04-03 ] -
【Member Papers】Electro-thermal crosstalk revealed by Raman thermography in multi-fin β-Ga₂O₃ FinFETs
[ 2026-04-02 ] -
【Member Papers】Identifying the Predominant Leakage Channel under Low Reverse Bias for β‑Ga₂O₃ Vertical Device Epitaxy on the (010) Plane
[ 2026-04-02 ] -
【Member Papers】Structural evolution and photoluminescence modulation by Gd³⁺ in Tb³⁺-doped Ga₂O₃
[ 2026-04-02 ]
