Member News
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【Member News】Zhang Hongliang from Xiamen University and Qi Hongji team from Shanghai Institute of Optics Fine Mechanics have made progress in the study of deep ultraviolet transparent conductive Si doped Gallium Oxide heteroepitaxial films
[ 2023-10-20 ] -
【Member News】Xianggang team of Sichuan University: Performance Enhancement and In Situ Observation of Resistive Switching and Magnetic Modulation by a Tunable Two-Level System of Mn Dopants in α-Gallium Oxide-based Memristor
[ 2023-10-07 ] -
【Member News】Hangzhou Fujia Gallium Technology participated in the launch of the national key project of "Research on large-size gallium oxide semiconductor Materials and High-performance Devices"
[ 2023-09-20 ] -
【Member News】New Progress in the Research Team of Northeast Normal University——Tin-doping induced solution treatment Ga₂O₃ high performance light sensor for neuromorphic visual system
[ 2023-09-15 ] -
【Member News】Development Plan of Novel Crystal Technology——Gallium Oxide Leading Enterprise
[ 2023-09-08 ] -
【Member News】High-quality 4-inch gallium oxide single crystal is successfully prepared via casting process by research team of Hangzhou International Science and Technology Innovation Center of Zhejiang University
[ 2023-09-08 ] -
【Member News】Beijing GAO Semiconductor Co.,Ltd received new financing
[ 2023-08-11 ] -
【Member News】Research progress in Gallium oxide materials and power devices by Mr. He Yunlong and his team from Xidian University
[ 2023-08-04 ] -
【Member News】Mitsubishi Electric and Taiyo Nippon Sanso Corporation invested in NCT, an important step in the commercialization of gallian oxide devices
[ 2023-08-04 ] -
【Member News】New research by Professor Han Genquan, Xidian University: Heterointegration technology realizes thermal management of gallium oxide electronic devices
[ 2023-07-31 ]
