
Paper Sharing
-
【Device Papers】High-Performance Broad-Spectrum UV Photodetectors with Uniform Response: Engineering β-Ga₂O₃:Si/GaN:Si Heterojunctions via Thermal Oxidation for Optoelectronic Logic Gate and Multispectral Imaging
[ 2025-01-15 ] -
【Device Papers】kV-class Ga₂O₃ vertical rectifiers fabricated on 4-in. diameter substrates
[ 2025-01-15 ] -
【Domestic Papers】Xinjiang University —— Influence of Polymorphism on the Lattice Thermal Conductivity of Ga₂O₃
[ 2025-01-13 ] -
【International Papers】Anderson disorder related p-type conductivity and metal-insulator transition in β-Ga₂O₃
[ 2025-01-13 ] -
【Epitaxy Papers】Plasmon Induced Conductivity Transition in Monoclinic Gallium Oxide
[ 2025-01-13 ] -
【Epitaxy Papers】Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga₂O₃) Thin Films
[ 2025-01-13 ] -
【Epitaxy Papers】Laser-MBE Improving growth of β-Ga₂O₃ films by introducing a Homo-Amorphous nucleation seed layer for solar-blind deep UV photodetector applications
[ 2025-01-13 ] -
【Device Papers】Sensing Performance Analysis of Passivated β-(AlₓGa₁₋ₓ)₂O₃ / Ga₂O₃ Schottky Diode Gas Sensor with Catalytic Metals at High Temperature
[ 2025-01-10 ] -
【Device Papers】Enhanced charge transfer across the dual interface of Ga₂O₃@TiO₂/Ti₃C₂ heterojunction for self-powered deep-ultraviolet photodetector
[ 2025-01-10 ] -
【Device Papers】Interface Engineering for Minimizing Trapped Charge Density in β-Ga₂O₃ Schottky Barrier Diodes for High-Performance Power Devices
[ 2025-01-10 ]