Paper Sharing
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【Device Papers】Enhanced electrical performances with HZO/β-Ga₂O₃ 3D FinFET toward highly perceptual synaptic device application
[ 2025-10-27 ] -
【Device Papers】Breaking the p-type doping barrier in β-Ga₂O₃: a GaN-based heterojunction bipolar transistor with high gain, high breakdown, and RF capability
[ 2025-10-27 ] -
【Member Papers】Ultra-wide Dynamic Range 109 dB β-Ga₂O₃ Photodetector Array: Broadest Linear Response from Dim to Bright Light
[ 2025-10-24 ] -
【International Papers】Hydrogen passivation of electron traps and fixed charges in SiO₂/β-Ga₂O₃(001) MOS structures
[ 2025-10-24 ] -
【International Papers】Evidence for carrier compensation by gallium vacancies during annealing of highly Si-doped β-Ga₂O₃
[ 2025-10-24 ] -
【Others Papers】Study of cs adsorption on Mg-doped β-Ga₂O₃(100) surface: A first-principles investigation
[ 2025-10-24 ] -
【Others Papers】Exploring the structural, electronic, and transport properties in thickness-dependent two-dimensional Ga₂O₃ induced by native defects
[ 2025-10-24 ] -
【Others Papers】Tunable optoelectronic and hydrogen evolution reaction properties of decorated 2D materials (Ga₂O₃ monolayer, ZnO monolayer and borophene)
[ 2025-10-24 ] -
【Member Papers】Catastrophic burnout mechanisms of NiO/β-Ga₂O₃ heterojunction diodes irradiated by 1.35 GeV high-energy heavy ions
[ 2025-10-23 ] -
【Member Papers】Passivation engineering enhanced photodetection in β-Ga₂O₃ deep ultraviolet photodetectors
[ 2025-10-23 ]
