Paper Sharing
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【Device Papers】SiH₄ plasma-induced interfacial modifications between Ti and Fe-doped β-Ga₂O₃ for development of new-generation x-ray detectors
[ 2025-09-03 ] -
【Device Papers】High-Voltage-Design and Ultrafast-Switching Issues of an UWBG Vertical Ga₂O₃ MOSFET
[ 2025-09-03 ] -
【Device Papers】Polarity-Dependent Band Alignment and Two-Dimensional Electron Gas Localization in β-Ga₂O₃/AlN Heterostructures
[ 2025-09-03 ] -
【Device Papers】Overcoming material limitations progresses of gallium oxide for power devices applications: A review
[ 2025-09-03 ] -
【International Papers】p-type layer formation study for Ga₂O₃ by employing Ni ion implantation with two-step oxygen plasma and thermal annealing
[ 2025-09-02 ] -
【Domestic Papers】Defect formation and modification of optical properties in β-Ga₂O₃ via carbon ion irradiation
[ 2025-09-02 ] -
【International Papers】Atomic-Scale Investigation of Defect Formation and Phase Transformation in Ir-Deposited Ga₂O₃ Schottky Diodes
[ 2025-09-02 ] -
【Epitaxy Papers】Preparation of PbO-Ga₂O₃ system polycrystalline thin film for direct conversion flexible X-ray detector application
[ 2025-09-02 ] -
【Epitaxy Papers】Enhancing solar-blind ultraviolet photodetection performance of room-temperature sputtered amorphous Ga₂O₃ thin films by doping zinc
[ 2025-09-02 ] -
【Epitaxy Papers】Structural Properties and Raman Spectra of Micron-Thick β-Ga₂O₃ Films Deposited on SiC/Porous Si/Si Substrates
[ 2025-09-02 ]
