【Member News】New Breakthrough | GAREN SEMI Achieve VB Method of 4-Inch Gallium Oxide Single Crystal Conductive Doping

VB Method 4-Inchs Gallium Oxide Single Crystal Conductive Doping

      In January 2025, Hangzhou GAREN SEMI Co., LTD. (hereinafter referred to as "GAREN SEMI") optimized the process based on the self-developed Gallium Oxide special crystal growth equipment, adopted the Vertical Bridgman (VB) method to successfully achieve 4 inches of Gallium Oxide single crystal conductive doping, to provide more product choices for downstream customers, and to help the development of the industry. The VB method Gallium Oxide crystal growth equipment and process package have been fully open for sale.

[Figure 1] GAREN SEMI VB method 4-inch conductive Gallium Oxide single crystal bottom surface

[Figure 2] GAREN SEMI VB method 4-inch conductive Gallium Oxide single crystal top surface

      In January 2025, GAREN SEMI achieved a 4-inch diameter breakthrough in the Gallium Oxide single crystal growth by VB method, and then further carried out conductive doping work on this basis, the R&D team achieved the growth of 4-inch conductive Gallium Oxide single crystal in only one batch. And the crystal growth results can be stably repeated. This fully shows that GAREN SEMI's self-developed Gallium Oxide special crystal growth equipment and its supporting crystal growth process have the advantages of high adaptability, high stability and high fault tolerance in the Gallium Oxide single crystal growth by VB method.

      The growth of 4-inch conductive Gallium Oxide single crystal still follows the fine seed crystal induction + conical shoulder-expanding technology, the seed and crystal axial parallel to [010] crystal orientation, can process 4-inch (010) surface substrate.

      The conductive (010) surface substrate has the following advantages:

      1.conductive (010) substrate has excellent electrical performance and high thermal conductivity, provides more flexibility for device design, can achieve better electrical performance and thermal management, suitable for high power device applications such as SBD;

      2.(010) surface substrate has a fast epitaxy growth rate, is conducive to thick film epitaxy, is the epitaxy preferred crystal face. At present, GAREN SEMI has launched wafer-grade (010) Gallium Oxide single crystal substrate products, which are oriented to the scientific research market, to meet the demand for (010) substrates in the field of scientific research, and promote the collaborative cooperation of the industry, education and research.

The Advantage of VB Method

      VB method has significant advantages in the growth of Gallium Oxide single crystal, is becoming the new favorite of the industry, and Gallium Oxide substrate manufacturers in domestic and international have begun to layout.

      【 Head substrate manufacturers abroad crystal growth results by VB method link: https://www.novelcrystal.co.jp/eng/2023/2340/】

      Advantage 1: VB method is suitable for growing Gallium Oxide single crystal whose axial parallel to [010] crystal orientation, which is conducive to processing large-size (010) face single crystal substrate.

      Advantage 2: The VB method does not use precious metal iridium crucible, without considering the oxidation loss of the crucible, and the cost is greatly reduced compared with the common growth method using iridium crucible.

      Advantage 3: VB method can grow single crystal in air atmosphere, which can effectively inhibit the high-temperature decomposition of Gallium Oxide, reduce the inclusion in the crucible corrosion crystal and other defects, and improve the crystal quality.

      Advantage 4: VB method has a small temperature gradient, the number of dislocation induced by crystal thermal stress is small, and the crystal quality is high.

      Advantage 5: VB crystals grow in the crucible, the crystal diameter is the crucible diameter, so there is no need to control the crystal diameter, low technical difficulty and high stability, easy to achieve automatic control.

GAREN SEMI Self-Developed Gallium Oxide Special Crystal Growth Equipment Version 2.0

      In September 2024, GAREN SEMI launched the first self-developed Gallium Oxide special crystal growth equipment which not only meets the needs of Gallium Oxide growth in high temperature and high oxygen environment, but also enables fully automated crystal growth, reducing manual intervention, and significantly improving production efficiency and crystal quality.

      Based on the initial equipment, the R&D team of GAREN SEMI carried out iterative upgrades. By optimizing the automatic temperature control system and internal thermal field structure, it not only expanded the crystal size, improved the crystal growth stability, but also greatly reduced the crystal growth cost and increased the service life of the equipment, which has outstanding advantages in the Gallium Oxide crystal growth and industrialization. In addition, large single crystal with a variety of crystal face can be obtained through process control and can be upgraded to larger sized single crystal to meet evolving epitaxy technology and device requirements.

      The advent of GAREN SEMI Gallium Oxide special crystal growth equipment version 2.0 will help Gallium Oxide industry in China to a new level. GAREN SEMI can also provide a variety of crystal face growth process documents to achieve highly personalized product customization, to meet the needs of universities, research institutes, and enterprise customers for the scientific research and production of GAREN SEMI crystal growth.

Company Profile

      Hangzhou GAREN SEMI Co., Ltd. was established in September 2022, is a technology enterprise focusing on the research and development, production and sales of Gallium Oxide and other semiconductor materials. The company has created a new technology for Gallium Oxide single crystal growth, and has 14 international and domestic invention patents, breaking through the monopoly and blockade of Western countries such as the United States and Japan on Gallium Oxide substrate materials. Based on solving the major national needs, GAREN SEMI will be deeply engaged in the continuous innovation of the Gallium Oxide upstream industry chain, and strive to provide product guarantee for the development of China's power electronics and other industries.

      GAREN SEMI leads the industry innovation, adopts the self-developed casting method Gallium Oxide single crystal growth technology, realizes the production technology breakthrough of 6-inch single crystal substrate and wafer-level (010) single crystal substrate, and develops the first Gallium Oxide special VB crystal growth equipment including process package. The company has mastered the core technology of Gallium Oxide growth, processing, epitaxy and other whole chain, providing customers with large-scale high-quality Gallium Oxide products and equipment with complete independent intellectual property rights.

For more information about GAREN SEMI and its products

Please visit our official website: http://garen.cc/

Or contact us:

Mr. Jiang :15918719807

Email: jiangjiwei@garen.cc

Mr. Xia :19011278792

Email:xianing@garen.cc