
Paper Sharing
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【Domestic Papers】National University of Kaohsiung——Analyses of the Properties of the NiO-Doped Ga₂O₃ Wide-Bandgap Semiconductor Thin Films
[ 2025-02-24 ] -
【International Papers】Band alignment characterizations of grafted GaAs/(-201)Ga₂O₃ heterojunction via x-ray photoelectron spectroscopy
[ 2025-02-24 ] -
【International Papers】Influence of short-pulsed Ion irradiation on optical and photoelectrical properties of thin gallium oxide films
[ 2025-02-24 ] -
【Device Papers】Comparative Study of AlGaN/InGaN/β-Ga₂O₃ and InAlN/InGaN/β-Ga₂O₃ HEMTs for Enhanced RF Linearity
[ 2025-02-24 ] -
【Device Papers】Performance Analysis of a two-stage Ga₂O₃ Voltage Multiplier
[ 2025-02-24 ] -
【Device Papers】Circuit Emulating Neural Response Based on Ga₂O₃ Photomemristor
[ 2025-02-24 ] -
【Domestic Papers】Research on Gallium Oxide Homoepitaxy and Two-Dimensional Step-Flow Growth
[ 2025-02-21 ] -
【International Papers】Hybrid Density Functional Theory Study on the Formation Energies of Donor and Acceptor N Impurities in β-Ga₂O₃
[ 2025-02-20 ] -
【Epitaxy Papers】Preparation of β-Ga₂O₃/ε-Ga₂O₃ type II phase junctions by atmospheric pressure chemical vapor deposition
[ 2025-02-19 ] -
【Epitaxy Papers】Surface patterning of wide-gap semiconducting β-Ga₂O₃ thin films by area selective crystallization via room-temperature excimer laser annealing and low toxic wet-etching processes
[ 2025-02-19 ]