Paper Sharing
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【Member Papers】Electrical conductance at Ga₂O₃/Si interfaces fabricated via surface activated bonding
[ 2025-10-28 ] -
【Domestic Papers】Hydrogen Treatment-Induced Interface State Optimization in Ni/Au (001) β-Ga₂O₃ Schottky Barrier Diode
[ 2025-10-28 ] -
【Domestic Papers】Experimental evidence of impurity-induced selective short-mean-free-path phonon scatterings in β-Ga₂O₃
[ 2025-10-28 ] -
【International Papers】Status of Ga₂O₃ for power device and UV photodetector applications
[ 2025-10-28 ] -
【Device Papers】High thermal reliability study of copper-based β-Ga₂O₃ Schottky diodes with thin Al₂O₃ insertion layers
[ 2025-10-28 ] -
【Device Papers】Effect of Growth Conditions on the Performance of Vertically Conducting β-Ga₂O₃ Diodes on 4H-SiC Substrate
[ 2025-10-28 ] -
【Device Papers】Polycrystalline β-Ga₂O₃ Used in Neuromorphic Information Storage: Trapping Centers for Carriers Leads to Persistent Photoconductive Effect
[ 2025-10-28 ] -
【Member Papers】Plasmon-Enhanced Performance in Self-Powered Solar-Blind CuCrO₂/β-Ga₂O₃ Heterojunction Photodetectors With Al Nanoparticles
[ 2025-10-27 ] -
【International Papers】Quasi-vertical β-Ga₂O₃ Schottky diodes on sapphire using all-LPCVD growth and plasma-free Ga-assisted etching
[ 2025-10-27 ] -
【Device Papers】Thermally stable X-ray detector using β-Ga₂O₃ schottky barrier diodes in extreme environments
[ 2025-10-27 ]
