Paper Sharing
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【Member Papers】 Xidian University --- (001) β-Ga₂O₃ epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD
[ 2025-04-03 ] -
【Member Papers】 Xidian University --- First-principles study of Mg-Ge co-doping to realize p-type β-Ga₂O₃ containing divacancy-interstitial complex defects
[ 2025-04-01 ] -
【Domestic Papers】Beijing Institute of Technology --- An ultra-violet and infrared dual-band photodetector using a Ga₂O₃ thin film and HgTe colloidal quantum dots
[ 2025-04-01 ] -
【Domestic Papers】 Beijing University of Technology --- Growth modes of β-Ga₂O₃ on h-BN: Remote epitaxy and van der Waals epitaxy
[ 2025-04-01 ] -
【International Papers】Electronic and Optical Properties of Highly Complex Ga₂O₃ and In₂O₃ Polymorphs Using Approximate Quasiparticle DFT + A – 1/2
[ 2025-04-01 ] -
【Device Papers】GaOx interlayer-originated hole traps in SiO₂/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition
[ 2025-04-01 ] -
【Device Papers】High-performance, reliable and self-powered solar-blind photodetectors based on GQDs/α-Ga₂O₃ heterojunctions
[ 2025-04-01 ] -
【Device Papers】Effects of Cu, Ag, and Au Elements Doping on the Electronic and Optical Properties of β-Ga₂O₃ via First-Principles Calculations
[ 2025-04-01 ] -
【Device Papers】Structural, electrical, and thermal characterization of homoepitaxial close-injection showerhead metalorganic chemical vapor deposition β-Ga₂O₃ enhancement-mode recessed-gate MOSFETs
[ 2025-04-01 ] -
【Member Papers】 Researchers Led by Prof. Kelvin H. L. Zhang from the Xiamen University——Electronic structure and surface band bending of Sn-doped β-Ga₂O₃ thin films studied by x-ray photoemission spectroscopy and ab initio calculations
[ 2025-03-31 ]
