Paper Sharing
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【International Papers】Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT
[ 2023-03-02 ] -
【International Papers】Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method
[ 2023-03-02 ] -
【International Papers】Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga₂O₃ semiconductor thin films
[ 2023-03-02 ] -
【Conference Papers】Progress of α-Ga₂O₃ for actual device applications
[ 2023-03-01 ] -
【Conference Papers】MOCVD growth of Ga₂O₃ and (AlGa)₂O₃：thin films and heterostructures
[ 2023-03-01 ] -
【Conference Papers】Single-domain κ-Ga₂O₃ thin films grown on ε-GaFeO₃ substrates by mist CVD
[ 2023-03-01 ] -
【Conference Papers】Impurity Scattering and Doping Control in MBE grown Ga₂O₃
[ 2023-03-01 ] -
【Conference Papers】Continuous Si doping in (010) and (001) β-Ga₂O₃ films by plasma-assisted molecular beam epitaxy
[ 2023-03-01 ] -
【Conference Papers】Towards controllable Si-doping in oxide molecular beam epitaxy：the example of β-Ga₂O₃ doped by a solid SiO source
[ 2023-03-01 ] -
【Conference Papers】Doping and diffusion of Mg in (010) β-Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy
[ 2023-03-01 ]
