Paper Sharing
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【International Papers】A novel AlN/β-Ga₂O₃ high electron mobility transistor with 2 kV and 600 GHz operation
[ 2025-09-04 ] -
【Member Papers】High-sensitivity and fast-response solar-blind photodetectors via band offset engineering for motion tracking
[ 2025-09-04 ] -
【Domestic Papers】In situ nitrogen doping of β-Ga₂O₃ during MOCVD homoepitaxy: A theoretical and experimental study
[ 2025-09-04 ] -
【International Papers】Modulation of thermal conductivity of iron-doped β-Ga₂O₃ by helium-ion irradiation
[ 2025-09-03 ] -
【Device Papers】SiH₄ plasma-induced interfacial modifications between Ti and Fe-doped β-Ga₂O₃ for development of new-generation x-ray detectors
[ 2025-09-03 ] -
【Device Papers】High-Voltage-Design and Ultrafast-Switching Issues of an UWBG Vertical Ga₂O₃ MOSFET
[ 2025-09-03 ] -
【Device Papers】Polarity-Dependent Band Alignment and Two-Dimensional Electron Gas Localization in β-Ga₂O₃/AlN Heterostructures
[ 2025-09-03 ] -
【Device Papers】Overcoming material limitations progresses of gallium oxide for power devices applications: A review
[ 2025-09-03 ] -
【International Papers】p-type layer formation study for Ga₂O₃ by employing Ni ion implantation with two-step oxygen plasma and thermal annealing
[ 2025-09-02 ] -
【Domestic Papers】Defect formation and modification of optical properties in β-Ga₂O₃ via carbon ion irradiation
[ 2025-09-02 ]
