Paper Sharing
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【Member Papers】Temperature dependence of barrier height in Ni/β-Ga₂O₃ Schottky barrier diode precisely determined by the analysis based on thermionic emission-diffusion model
[ 2025-07-25 ] -
【Domestic Papers】Modulation of defect structures for MOCVD-grown ε-Ga₂O₃ thin films by using sapphire substrates with large off-axis angles
[ 2025-07-25 ] -
【International Papers】Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to β-Ga₂O₃ by removing surface carbon
[ 2025-07-25 ] -
【Device Papers】Dry Etching of Cr₂MnO₄ Thin Films for Forming p-n Junctions with β-Ga₂O₃
[ 2025-07-25 ] -
【Device Papers】Performance enhancement of asymmetric gate graded-AlGaN/GaN HEMT on β-Ga₂O₃ substrate for RF applications
[ 2025-07-25 ] -
【Device Papers】Self-aligned nitrogen doping via plasma treatment of NiO/β-Ga₂O₃ heterojunction diodes
[ 2025-07-25 ] -
【Device Papers】Nanometer-Thick Films of Cobalt Phthalocyanine/Indium–Gallium–Zinc Oxide Heterojunctions for Ultraviolet-Assisted Recoverable NO₂ Gas Sensors
[ 2025-07-25 ] -
【Member Papers】Phonon polariton in thin β-Ga₂O₃ crystal
[ 2025-07-24 ] -
【International Papers】Thickness dependence of optoelectronic properties of gallium oxide film deposited by electron beam evaporation technique
[ 2025-07-24 ] -
【Epitaxy Papers】Silicon Doping in Amorphous Gallium Oxide Films by Plasma-Enhanced Atomic Layer Deposition for Dielectric and Optoelectronic Applications
[ 2025-07-24 ]
