Paper Sharing
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【Device Papers】Performance Improvement of Enhanced-Mode β-Ga₂O₃ MOSFETs by Partial Gate Recess Structure
[ 2024-12-02 ] -
【Device Papers】Ga₂O₃ fin field-effect transistors with on-axis (100)-plane gate sidewalls fabricated on Ga₂O₃ (010) substrates
[ 2024-12-02 ] -
【Domestic Papers】Researchers from Hunan University of Science and Engineering Investigated the Role of 3d TM-Doped Two-Dimensional Ga₂O₃
[ 2024-11-29 ] -
【International Papers】Charge Traps in Wide-Bandgap Semiconductors for Power Electronics Applications
[ 2024-11-29 ] -
【Others Papers】Transparent rare earth-doped gallium oxide ceramics with oriented microstructure
[ 2024-11-29 ] -
【Others Papers】Tuning the optoelectronic properties of two-dimensional β-Ga₂O₃ using surface passivation and the layer thickness
[ 2024-11-29 ] -
【Others Papers】Gallium oxide (Ga₂O₃) energy dependent scintillation response to fast neutrons and flash gamma-rays
[ 2024-11-29 ] -
【Others Papers】 Microstructure and Properties of Cu-doped β-Ga₂O₃ Rod Prepared with Liquid Metallic Gallium
[ 2024-11-29 ] -
【Domestic Papers】Researchers from Jilin University have developed improved-performance amorphous Ga₂O₃ photodetectors fabricated using capacitive coupled plasma-assisted magnetron sputtering
[ 2024-11-27 ] -
【International Papers】Comprehensive characterization of nitrogen-related defect states in β-Ga₂O₃ using quantitative optical and thermal defect spectroscopy methods
[ 2024-11-27 ]
