Member News
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【Member News】Fujia Gallium Showcases at the 2026 Semiconductor New Materials Development (Deyang) Conference; Chairman Qi Hongji Invited to Discuss Key Issues in Gallium Oxide Industrialization
[ 2026-04-20 ] -
【Member News】Toward the Industrialization of Gallium Oxide: How Can Defect Challenges Be Overcome? — Fujia Gallium Co-Hosts the Symposium on Ga₂O₃ Single-Crystal Defect Research, Focusing on Key Technologies
[ 2026-04-16 ] -
【Member News】Shandong Liguan Achieves Major Breakthrough in 8-Inch Gallium Oxide HVPE Epitaxy Equipment
[ 2026-04-10 ] -
【Member News】Fujia Gallium Leads China’s Gallium Oxide Industry: Full-Chain Innovation from Material Breakthroughs to Device Performance Limits
[ 2026-04-09 ] -
【Member News】Overview of Technological Achievements of Shandong Jingsheng Electronic Technology Co., Ltd.: Covering Equipment for Ga₂O₃, SiC, GaN, and AlN
[ 2026-04-09 ] -
【Member News】First to Exceed 10 kV! Garen Semiconductor Enables Pinghu Lab to Develop 10 kV-Class Ultra-Low On-Resistance Gallium Oxide Photoconductive Switch
[ 2026-04-07 ] -
【Member News】CSW 2026 Held in Kumamoto, Japan: NCT Exhibits and Delivers Invited Talk on Gallium Oxide Device Advances
[ 2026-04-03 ] -
【Member News】Breakthrough 9,000 V! Fujia Gallium Epitaxy Enables Record Ga₂O₃ MOSFET Breakdown, Ushering Power Devices into the “10 kV Era”
[ 2026-04-01 ] -
【Member News】Breakthrough of 9,000 V! Jiufengshan Laboratory Sets New Breakdown Voltage Record for Ga₂O₃ MOSFETs
[ 2026-03-31 ] -
【Member News】Shandong Liguang Microelectronics: A Successful Conclusion to SEMICON CHINA 2026!
[ 2026-03-31 ]
