Member News
-
【Member News】SINOGa Valley Semiconductor: Advancing (001) Twin-Free Gallium Oxide Crystals to the Forefront of the Global Semiconductor Industry
[ 2026-10-15 ] -
【Member News】Guangzhou Tanoxi Technology Co., Ltd. Achieves Breakthrough in (010) Gallium Oxide SBD Device Technology
[ 2026-10-10 ] -
【Member News】Garen Semiconductor Selected for the "2026 AI Innovation Applications Top 50" Exemplary Cases List
[ 2026-10-09 ] -
【Member News】From 13.2 GW/cm² to 90 GHz and 8 kV: Zhang Jincheng and Xidian University's Gallium Oxide Device Breakthrough
[ 2026-10-08 ] -
【Member News】Industry Fast Track | Spectrum Semiconductor and Fujia Gallium Sign Strategic Cooperation Agreement
[ 2026-09-30 ] -
【Member News】Supporting Nearly 2 kV Vertical Devices! GAO Semiconductor’s Ga₂O₃ Materials Successfully Validated at the Device Level
[ 2026-09-30 ] -
【Member News】From GaN to Ga₂O₃: Academician Yue Hao's Team's 8-Year Journey of Breakthroughs in Ultra-Wide-Bandgap Semiconductors
[ 2026-09-29 ] -
【Member News】Shandong SINOGa Valley Semiconductor and AVONFLOW Enter
[ 2026-09-29 ] -
【Member News】2026: A Pivotal Year for ε-Ga₂O₃
[ 2026-09-21 ] -
【Member News】Tanoxi Technology Achieves Key Breakthrough in (010)-Oriented Thick-Film Ga₂O₃ Epitaxy by MOCVD: High-Quality Thick Films Reach a Mobility of 160 cm²/V·s
[ 2026-09-20 ]
