Paper Sharing
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【Member Papers】Boosting the responsivity of β-Ga₂O₃ metal–semiconductor–metal solar-blind photodetectors through oxygen-related defect states
[ 2026-03-19 ] -
【Device Papers】Temperature Optimized β-Ga₂O₃ Solar-Blind Ultraviolet Photodetectors Fabricated by PLD for Communication and Imaging Application
[ 2026-03-19 ] -
【Device Papers】Challenges and opportunities in Ga₂O₃ solar-blind photodetectors: From material engineering to device realization
[ 2026-03-19 ] -
【Member Papers】Theoretical study of polarity-driven interfacial engineering for high-performance β-Ga₂O₃ optoelectronic devices
[ 2026-03-18 ] -
【Domestic Papers】Research on nitrogen annealing of V-doped β-Ga₂O₃ single crystals grown by EFG
[ 2026-03-18 ] -
【Member Papers】Ultrathin GaOx Tunneling Contact for 2D Transition-metal Dichalcogenides Transistor
[ 2026-03-18 ] -
【Device Papers】Investigation of high-temperature electrical transport and current conduction mechanism in PLD deposited LaAlO₃/Sn-doped β-Ga₂O₃ (−201) MOS capacitor
[ 2026-03-18 ] -
【Device Papers】Engineering unidirectional photocurrent in isotype-Ga₂O₃/GaN-based light-activated diodes
[ 2026-03-18 ] -
【Member Papers】Bond-angle modulation in nucleation layer overcomes lattice-mismatch limits in Ga₂O₃ heteroepitaxy
[ 2026-03-17 ] -
【International Papers】Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β-Ga₂O₃ (001) Trench Schottky Barrier Diodes Using H₃PO₄ Treatment
[ 2026-03-17 ]
