
Paper Sharing
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【Device Papers】The Achievement of Pulse Laser Deposited Amorphous P-Type N-Doped Ga₂O₃ for Applying in Thin Film Transistor and Homojunction Diode
[ 2025-07-04 ] -
【Device Papers】First Demonstration of a Gallium Oxide Power Converter
[ 2025-07-04 ] -
【Device Papers】UV-Enhanced Room-Temperature Ammonia Detection Using a Ga₂O₃/Ti₃C₂Tₓ MXene Gas Sensor
[ 2025-07-04 ] -
【Member Papers】Precise thermal dissipation of Ga₂O₃ devices integrated with diamond heat spreading layer
[ 2025-07-03 ] -
【Member Papers】First Demonstration of CuCrO₂/β-Ga₂O₃ p-n Heterojunction Diode With High Breakdown Voltage and Low Leakage Current
[ 2025-07-03 ] -
【Member Papers】Angle-resolved polarization Raman spectroscopy of β-Ga₂O₃ and their application in sensitive solar-blind photodetection
[ 2025-07-03 ] -
【Domestic Papers】3.0 kV β-Ga₂O₃-Based Vertical p-n Heterojunction Diodes With Helium- Implanted Edge Termination
[ 2025-07-03 ] -
【Domestic Papers】Integrating photodetection and neuromorphic vision in ALD-grown amorphous Ga₂O₃ thin films via bias-voltage modulation
[ 2025-07-03 ] -
【Device Papers】Band alignment of Cr₂MnO₄ on (-201) and (001) β-Ga₂O₃
[ 2025-07-03 ] -
【Device Papers】First Observations and Physical Insights of the Dynamic Breakdown Voltage and Overvoltage Margin Under Pulsed Conditions in β-Ga₂O₃ Based Devices
[ 2025-07-03 ]