Paper Sharing
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【Device Papers】Optimized HZO/Al₂O₃ gate stack enables thermally stable β-Ga₂O₃ ferroelectric field-effect transistors with an enhanced memory window
[ 2026-09-08 ] -
【Device Papers】Plasma-power-driven recovery of dry-etch damage and barrier uniformity in β-Ga₂O₃ Schottky barrier diodes
[ 2026-09-08 ] -
【Member Papers】Van der Waals epitaxy of β-Ga₂O₃ films on polycrystalline diamond substrates enabled by graphene interlayer for efficient thermal management
[ 2026-09-07 ] -
【Device Papers】Balancing Conductive Network Continuity and Out-of-Plane Transport Barrier in PEDOT:PSS/Ga₂O₃ Self-Powered Solar-Blind Photoelectrochemical Photodetectors
[ 2026-09-07 ] -
【Device Papers】Impact of 2D h-BN Interlayer on Leakage Mechanisms and Device Performance Optimization in High-Reliability β-Ga₂O₃ MIS Devices
[ 2026-09-07 ] -
【Domestic Papers】He-induced semi-insulating microcolumns for high-voltage leakage current suppression in β-Ga₂O₃ Schottky barrier diodes
[ 2026-09-07 ] -
【Domestic Papers】Area Scaling-up of β-Ga₂O₃ Schottky Barrier Diodes Achieving 62 A Surge Current and 1.9 kV Breakdown Voltage
[ 2026-09-07 ] -
【Domestic Papers】Orientation-Engineered β-Ga₂O₃ Optoelectronic Synapses for Polarization-Sensitive Neuromorphic Vision
[ 2026-09-07 ] -
【International Papers】Dislocations in (011)-oriented vertical Bridgman β-Ga₂O₃ substrates
[ 2026-09-07 ] -
【Member Papers】Ferroelectricity in six-angstrom-thick two-dimensional gallium oxide
[ 2026-09-07 ]
