Paper Sharing
-
【Member Papers】Radiation Effects of 500 MeV Kr⁺ ions on NiO/β-Ga₂O₃ heterojunction diodes
[ 2025-08-01 ] -
【International Papers】Polarization-dependent resonant inelastic x-ray scattering of β-Ga₂O₃: An experimental and computational study
[ 2025-08-01 ] -
【Device Papers】High performance vacuum annealed β-(AlₓGa₁₋ₓ)₂O₃/Ga₂O₃ HFET with fᴛ/fᴍᴀx of 32/65 GHz
[ 2025-08-01 ] -
【Device Papers】Wide bandgap tunable deep ultraviolet Ga₂O₃/GaN heterojunction photodetector
[ 2025-08-01 ] -
【Device Papers】High performance polycrystalline β-Ga₂O₃/GaN solar blind photodetector realized via simple one step air ambient thermal oxidation process
[ 2025-08-01 ] -
【Device Papers】Boosted Performance of Atomic-Layer-Deposited Dual-Gate Indium-Gallium-Zinc-Oxide Transistors
[ 2025-08-01 ] -
【Member Papers】Synergistic mechanism underlying the enhanced electrical performance of vertical β-Ga₂O₃ Schottky barrier diodes through proton irradiation and annealing
[ 2025-07-31 ] -
【Member Papers】High-Performance ZrO₂/β-Ga₂O₃ (001) Metal–Insulator–Semiconductor Capacitors
[ 2025-07-31 ] -
【International Papers】Assessment of Trapping Phenomena in As-Grown and Thermally-Treated Si-Doped κ-Ga₂O₃ Layers via Optical Admittance Spectroscopy
[ 2025-07-31 ] -
【Substrate Papers】Electron Scattering and Hopping Conduction Mechanisms in n-type β-Ga₂O₃
[ 2025-07-31 ]
