Member News
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【Member News】 8 Inches Gallium Oxide Wafer Substrate Shocked Appeared | Hangzhou GAREN Kernel Invite You to SEMICON Witness New Breakthrough in the Semiconductor Industry
[ 2025-03-26 ] -
【Member News】Suzhou Nanotechnology Institute's Processing Platform and Nanodevice Research Department Make New Progress in the Field of Solar-Blind UV Detection
[ 2025-03-25 ] -
【Member News】Scientific Research Leads and Promotes Industrial Innovation! "Today's Jiangsu" Column Enters Suzhou GAO SEMI Co., Ltd！
[ 2025-03-24 ] -
【Member News】Breaking the world’s highest performance of Gallium Oxide transistors – Adopts a new guard ring structure and demonstrates 3.2 times the performance of the power device compared to the previous record –
[ 2025-03-14 ] -
【Member News】Breakthrough in Fujia Gallium's Gallium Oxide MOCVD Homoepitaxy, Support Vertical Power Device Industries to Land
[ 2025-03-10 ] -
【Member News】CASICON Chongqing Station | Zhang Hui, Chairman of GAREN SEMI: Progress in Large and High Quality Gallium Oxide Single Crystal Materials
[ 2025-03-07 ] -
【Member News】Global Debut | Releases First 8-Inch Gallium Oxide Single Crystal, Ushering in a New Era of Gallium Oxide
[ 2025-03-06 ] -
【Member News】Major Breakthrough! Fujia Gallium Attained 4-Inch VB Method Gallium Oxide Substrate with Excellent Performance and Launched a Crystal Growth Equipment
[ 2025-02-19 ] -
【Member News】New Breakthrough in iSABers Bonding Technology: Hybrid Bonding and C2W Technology Lead Industrial Upgrading
[ 2025-02-19 ] -
【Member News】New Breakthrough | GAREN SEMI Achieve VB Method of 4-Inch Gallium Oxide Single Crystal Conductive Doping
[ 2025-02-13 ]
