Member News
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【Member News】Qi Hongji, Chairman of Fujia Gallium: Anchoring Industrialization to Seize the Development Opportunity of Gallium Oxide Materials
[ 2025-01-22 ] -
【Member News】The Association Standards Project Review Meeting of "Gallium Oxide Single Crystal Dislocation Density Test Method" and "β Phase Gallium Oxide Homogeneous Epitaxial Wafer" was Successfully Held
[ 2025-01-21 ] -
【Member News】New Journey, Start Again丨Suzhou GAO SEMI Co., Ltd. Held the Opening Ceremony and Signed Cooperation and Released New Products
[ 2025-01-17 ] -
【Member News】The world's First Ultra-Wide Band Gap Semiconductor High-Frequency Filter Chip Production Line will be Born in Shanghang
[ 2025-01-16 ] -
【Member News】Fujia Gallium Cooperation Research Achievements Listed in Materials Today Physics, High-Quality MBE Epitaxial Film Performance Comparable to the Highest International Technical Level
[ 2025-01-13 ] -
【Member News】Hangzhou GAREN SEMI Successfully Prepared 4-inch Gallium Oxide Single Crystal by VB Method (Non-Iridium Crucible)
[ 2025-01-10 ] -
【Member News】Xinhua News Agency "China Securities Journal" in-Depth Focus on Fujia Gallium, Make Scientific and Technological Innovation and Industrial Integration Run Out of the "Acceleration"
[ 2025-01-06 ] -
【Member News】Hangzhou GAREN SEMI Made a Breakthrough in Gallium Oxide Substrate Technology to Help Customers Achieve 2400V Enhanced Transistor
[ 2024-12-31 ] -
【Member News】Shanghai Institute of Microsystem and Information Technology and Nanjing Electronic Devices Institute Have Collaborated to Achieve the First Preparation of Diamond-Based Gallium Oxide Heterojunction Integrated Materials and Devices
[ 2024-12-19 ] -
【Member News】Li Shan, R&D Director of GAO SEMI: Research on the Epitaxial Growth by PECVD and Photoelectric Information Sensing Devices of Gallium Oxide
[ 2024-12-17 ]
