Paper Sharing
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【Epitaxy Papers】MOCVD growth of β-Ga₂O₃ with fast growth rates (>4.3 μm/h), low controllable doping, and superior transport properties
[ 2025-01-06 ] -
【Device Papers】Electrostatic discharge protection of low-voltage circuits by forward characteristics of wide bandgap semiconductor Schottky barrier diodes
[ 2025-01-06 ] -
【Device Papers】Enabling DUV polarization detection with isotropic amorphous gallium oxide
[ 2025-01-06 ] -
【Device Papers】Integration of high-κ native oxides of gallium for two-dimensional transistors
[ 2025-01-06 ] -
【Domestic Papers】Retina-Inspired X-Ray Optoelectronic Synapse Using Amorphous Ga₂O₃ Thin Film
[ 2024-12-31 ] -
【International Papers】Proton irradiation Of Ga₂O₃ Schottky diodes and NiO/Ga₂O₃ heterojunctions
[ 2024-12-31 ] -
【Substrate Papers】Surface structure of Sn doped β-Ga₂O₃ (010) p(1×1) studied by quantitative Low Energy Electron Diffraction
[ 2024-12-31 ] -
【Substrate Papers】Defect evolution and nitrogen incorporation in ion-implanted β-Ga₂O₃
[ 2024-12-31 ] -
【Substrate Papers】Research on Positron Annihilation Spectroscopy of Defect and Electrical Conductivity in Sn-Doped β-Ga₂O₃ Semiconductors
[ 2024-12-31 ] -
【Device Papers】Zr-Doping Strategy of High-Quality Cu₂O/β-Ga₂O₃ Heterojunction for Ultrahigh-Performance Solar-Blind Ultraviolet Photodetection
[ 2024-12-31 ]
