Paper Sharing
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【Device Papers】Passivation-Dependent Device-Level Thermal Robustness of Indium Gallium Oxide Thin-Film Transistors under Dynamic Random-Access Memory Relevant 600 °C Nitrogen Annealing
[ 2026-09-28 ] -
【Device Papers】Deep-Level Trap Engineering in Sn-Doped β-Ga₂O₃ MISFETs for Optoelectronic Memory and Reconfigurable Logic Application
[ 2026-09-28 ] -
【Device Papers】Gallium Oxide Schottky Barrier Diodes for Extreme-Temperature Power and Optoelectronic Devices
[ 2026-09-28 ] -
【Domestic Paperes】"Complementary Material Integration": Co‑Optimizing Low Noise and High Signal in X‑Ray Detectors for High Detectivity via β-Ga₂O₃/3D/2D Metal Halide Perovskite Heterojunction
[ 2026-09-24 ] -
【International Papers】MOCVD Growth of (011) β-Ga₂O₃ Films: Defect Control and Device Implication
[ 2026-09-24 ] -
【Member Papers】Wafer-scale heteroepitaxy of Sn-alloyed ε-Ga₂O₃ on sapphire via low-pressure mist-CVD
[ 2026-09-23 ] -
【Epitaxy Papers】ALD grown (001) κ-Ga₂O₃ epitaxial thin films on c-plane sapphire: Influence of thickness and thermal annealing
[ 2026-09-23 ] -
【Epitaxy Papers】Pulsed-Liquid-Injection MOCVD of Epitaxial β-Ga₂O₃ Thin Films as a Promising Alternative Chemical Route
[ 2026-09-23 ] -
【Member Papers】APL | Zheng Shi’s Team at Nanjing University of Posts and Telecommunications: Self-Powered Reconfigurable UV Logic Enabled by Photocurrent Polarity Reversal in a Ga₂O₃/GaN Heterojunction, with Six Logic Functions Realized in a Single Device
[ 2026-09-22 ] -
【Member Papers】Atomic-Scale Strain Relaxation via Ar-Bombarded Surface Modification for Enabling Single-Crystalline β-Ga₂O₃ (010) Heteroepitaxy
[ 2026-09-22 ]
