Paper Sharing
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【International Papers】VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga₂O₃ HJDs with PFOM >2.3 GW/cm²
[ 2026-05-12 ] -
【Member Papers】High-performance vertical β-Ga₂O₃ Schottky barrier diodes utilizing sputtered p-NiO double mesa junction termination extension
[ 2026-05-12 ] -
【Domestic Papers】Amorphous-Ga₂O₃/CuₓO/Cu heterojunction for cost-effective weak-UV light detection
[ 2026-05-12 ] -
【Device Papers】The influence of intrinsic point defects on the optoelectronic properties of β-Ga₂O₃(100)/NiO(100) heterojunction interface
[ 2026-05-12 ] -
【Device Papers】Ultrathin amorphous-Ga₂O₃ vertical SBD-based bridge rectifier and its hybrid buck system
[ 2026-05-12 ] -
【Device Papers】Toward Low-Dark-Current Solar-Blind UV Photodetectors: Ozone-RTA Suppression of Oxygen Vacancies in Ni-Doped β-Ga₂O₃
[ 2026-05-12 ] -
【Device Papers】Band Alignment Tuning of Sputtered a-Ga₂O₃/4H-SiC Heterostructures via an Amorphous BN Buffer Layer
[ 2026-05-12 ] -
【Domestic Papers】Lattice-Rotating SrTiO₃ Buffer Enables Self-Powered DUV/NIR Dual-Band Ga₂O₃/GaAs Photodetectors with Wavelength-Polarity Locking for Optical Encryption
[ 2026-05-11 ] -
【Member Papers】Microscopic origin of dopant-dependent defect states and carrier compensation in Si- and Sn-doped β-Ga₂O₃
[ 2026-05-11 ] -
【Domestic Papers】Deformation and material removal mechanisms of single-crystal β-Ga₂O₃ via deep-ultraviolet-assisted surface corrosion
[ 2026-05-11 ]
