Paper Sharing
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【Domestic Papers】 University of Science and Technology of China --- Improvement of interface quality through low-temperature annealing in β-Ga₂O₃ diode with compounded mesa and junction termination extension
[ 2025-03-18 ] -
【Member Papers】Researchers from the JFS Laboratory of Interface states in semiconductor and their influence on Schottky barrier in β-Ga₂O₃
[ 2025-03-18 ] -
【International Papers】Comparative Study of the Optical Properties of α-, β-, and κ-Ga₂O₃
[ 2025-03-18 ] -
【Epitaxy Papers】Ultraviolet Photoresponse and Electroluminescence of Exfoliated Ga₂O₃ Flake on p-type GaN
[ 2025-03-18 ] -
【Epitaxy Papers】Influence of different crystals on the properties of gallium oxide materials and solar blind UV photoelectric detection
[ 2025-03-18 ] -
【Epitaxy Papers】Fluorine-Doped N-Type α-Ga₂O₃ and Its Phase Stability
[ 2025-03-18 ] -
【Epitaxy Papers】Structural and spectroscopic properties of Hydrothermally Synthesized α-GaO(OH) Structures: Impact of Annealing Temperatures
[ 2025-03-18 ] -
【International Papers】Dielectric reliability and interface trap characterization in MOCVD grown in situ Al₂O₃ on β-Ga₂O₃
[ 2025-03-17 ] -
【Domestic Papers】β-Ga₂O₃ Thin Films via an Inorganic Sol–Gel Spin Coating: Preparation and Characterization
[ 2025-03-17 ] -
【International Papers】All-implanted lateral β-Ga₂O₃ MOSFET devices realized on semi-insulating (-201) β-Ga₂O₃ substrates
[ 2025-03-17 ]
