Paper Sharing
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【Member Papers】Electro-Thermal Co-Design β-Ga₂O₃ MOS-Type Trench Diode Based on Optimized Trench-Sidewall Interface Quality Strategy and Mechanism Study
[ 2026-06-25 ] -
【Other Papers】Luminescence evolution across the β↔γ polymorphic transition in Ga₂O₃
[ 2026-06-24 ] -
【Other Papers】Progress and challenge in ultrawide bandgap semiconductors
[ 2026-06-24 ] -
【Member Papers】Demonstration of β-Ga₂O₃ Lateral Heterojunction Diodes with 450 V Single-event Burnout Voltage
[ 2026-06-24 ] -
【Member Papers】Wavelength- and intensity-tunable self-powered bipolar photodetectors based on α-Ga₂O₃ heterostructures for encrypted communication
[ 2026-06-23 ] -
【Substrate Papers】Anisotropic phonon response to electron irradiation in β-Ga₂O₃ single crystals revealed by temperature-dependent Raman spectroscopy
[ 2026-06-23 ] -
【Substrate Papers】Molecular beam epitaxy of ferroelectric ScAlN on β-Ga₂O₃ substrates
[ 2026-06-23 ] -
【Member Papers】An Electro-Thermal Co-Designed Ga₂O₃ [100] Trench Power Diode Featuring Ferroelectric Dielectric
[ 2026-06-22 ] -
【Member Papers】A Novel Electric field Modulation Ga₂O₃ Schottky Barrier Diode with Nitrogen-Ion Implantation combine with Trench Field Limit Rings and Floating Metal Rings Termination
[ 2026-06-22 ] -
【Domestic Papers】High Breakdown Voltage (>3 kV) in β-Ga₂O₃ Lateral MOSFETs Enabled by a Si₃N₄ Terminal Structure
[ 2026-06-22 ]
