Paper Sharing
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【Others Papers】Step-and-terrace surface formation on (001) β-Ga₂O₃ by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer
[ 2025-08-06 ] -
【Others Papers】Role of Electron and Hole Trapping in Crystalline and Amorphous Ga₂O₃ in Defect Generation
[ 2025-08-06 ] -
【Others Papers】First-principles study of the hole mobility of pristine and Mg-doped Ga₂O₃ under pressure
[ 2025-08-06 ] -
【Member Papers】C-Band β-Ga₂O₃-on-SiC RF Power MOSFETs With High Output Power Density and Low Microwave Noise Figure
[ 2025-08-04 ] -
【Domestic Papers】Solar-blind UV light-modulated β-Ga₂O₃ full-wave bridge rectifier
[ 2025-08-04 ] -
【International Papers】Effect of substrate pretreatment on the epitaxial growth of κ-Ga₂O₃ layers on sapphire by halide vapor phase epitaxy
[ 2025-08-04 ] -
【Device Papers】Structural and Electronic Properties of β-(AlₓGa₁₋ₓ)₂O₃ Active Layers for Space-Qualified Solar-Blind Photodetectors
[ 2025-08-04 ] -
【Device Papers】Low leakage current β-Ga₂O₃ MOS capacitors with ALD deposited Al₂O₃ gate dielectric using Ozone as precursor
[ 2025-08-04 ] -
【Device Papers】Monolithic Integrated, Reconfigurable Gallium Oxide NAND/NOR Gates with Ferroelectric AlScN Gate Stack
[ 2025-08-04 ] -
【Device Papers】Unveiling GaN/α-Ga₂O₃ interface contact barrier modulation via post-deposition annealing: DFT insights
[ 2025-08-04 ]
