Paper Sharing
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【Domestic Papers】High gain Ga₂O₃/GaN avalanche photodetector with separated absorption and multiplication structure
[ 2025-12-22 ] -
【Substrate Papers】Physical and Multi-Stimuli Luminescence Properties with Defect Correlation in (100) and (010) Oriented Eu:β-Ga₂O₃ Single Crystals
[ 2025-12-22 ] -
【Substrate Papers】Effect of CF4 Plasma Treatment on β-Ga₂O₃ (001) Substrates for Enhanced Homoepitaxial Growth by MOCVD
[ 2025-12-22 ] -
【Domestic Papers】32 ×32 β-Ga₂O₃ MOS solar-blind ultraviolet detector array and its properties
[ 2025-12-19 ] -
【Domestic Papers】High-quality β-(AlₓGa₁₋ₓ)₂O₃ heteroepitaxy grown on (010) Ga₂O₃ via MOCVD and transistor demonstration
[ 2025-12-19 ] -
【Others Papers】Band Offset and Defect Properties of Ultra-Wide Bandgap Semiconductor Ga₂O₃ and Its Alloys: From First Principles to Device Modelling
[ 2025-12-19 ] -
【Others Papers】The Laser-Induced Periodic Surface Structures (LIPSS) generated by β-Ga₂O₃ under picosecond pulsed Laser interference
[ 2025-12-19 ] -
【Member Papers】Robust Ga₂O₃ Memristor with Sharp Stable Negative Differential Resistance for Energy-Efficient Reliable Analog Resistive Switching and Artificial Synapse Applications
[ 2025-12-18 ] -
【International Papers】β-Ga₂O₃ crystal growth with cold container crucibles: Large-scale oxide crystal growth from cold crucible method
[ 2025-12-18 ] -
【Domestic Papers】Electrical Characteristics of Ultrathin β-Ga₂O₃ MOSFETs on SiO₂ Substrates
[ 2025-12-18 ]
