Paper Sharing
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【Device Papers】1 MeV Proton-Induced Damage in β-Ga₂O₃ Schottky Barrier Diodes under Forward Bias
[ 2026-09-09 ] -
【Device Papers】High-BFOM GaN p-channel MOSFETs enabled by ALD Ga₂O₃ gate dielectric
[ 2026-09-09 ] -
【Member Papers】Low-Temperature Deposition of Polycrystalline ε-Ga₂O₃ for Deep Ultraviolet Perceptual Photodetection
[ 2026-09-08 ] -
【Device Papers】Optimized HZO/Al₂O₃ gate stack enables thermally stable β-Ga₂O₃ ferroelectric field-effect transistors with an enhanced memory window
[ 2026-09-08 ] -
【Device Papers】Plasma-power-driven recovery of dry-etch damage and barrier uniformity in β-Ga₂O₃ Schottky barrier diodes
[ 2026-09-08 ] -
【Member Papers】Van der Waals epitaxy of β-Ga₂O₃ films on polycrystalline diamond substrates enabled by graphene interlayer for efficient thermal management
[ 2026-09-07 ] -
【Device Papers】Balancing Conductive Network Continuity and Out-of-Plane Transport Barrier in PEDOT:PSS/Ga₂O₃ Self-Powered Solar-Blind Photoelectrochemical Photodetectors
[ 2026-09-07 ] -
【Device Papers】Impact of 2D h-BN Interlayer on Leakage Mechanisms and Device Performance Optimization in High-Reliability β-Ga₂O₃ MIS Devices
[ 2026-09-07 ] -
【Domestic Papers】He-induced semi-insulating microcolumns for high-voltage leakage current suppression in β-Ga₂O₃ Schottky barrier diodes
[ 2026-09-07 ] -
【Domestic Papers】Area Scaling-up of β-Ga₂O₃ Schottky Barrier Diodes Achieving 62 A Surge Current and 1.9 kV Breakdown Voltage
[ 2026-09-07 ]
