Paper Sharing
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【Member Papers】 Shenzhen Pinghu Laboratory —— Rhodium-Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra-Wide Bandgap Semiconductors
[ 2024-12-23 ] -
【International Papers】Luminescence properties of dislocations in α-Ga₂O₃
[ 2024-12-23 ] -
【Epitaxy Papers】Challenges and solutions in Mist-CVD of Ga₂O₃ heteroepitaxial films
[ 2024-12-23 ] -
【Epitaxy Papers】Germanium surface segregation in highly doped Ge:β-Ga₂O₃ grown by molecular beam epitaxy observed by synchrotron radiation hard x-ray photoelectron spectroscopy
[ 2024-12-23 ] -
【Epitaxy Papers】Impact of an annealing atmosphere on band-alignment of a plasma-enhanced atomic layer deposition-grown Ga₂O₃/SiC heterojunction
[ 2024-12-23 ] -
【Device Papers】Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga₂O₃ solar-blind photodetector
[ 2024-12-23 ] -
【Device Papers】Cu₂O/Ga₂O₃ pn-junction photodetector with low dark current and high detectivity
[ 2024-12-23 ] -
【Device Papers】Synaptic Properties of an Interfacial Memristor Based on a Ga₂O₃/Nb:SrTiO₃ Heterojunction
[ 2024-12-23 ] -
【Member Papers】Nanjing University of Posts and Telecommunications——Ultraviolet communication system utilizing effective performance β-Ga₂O₃ photodetector
[ 2024-12-19 ] -
【Device Papers】Border Trap-Enhanced Ga₂O₃ Nonvolatile Optoelectronic Memory
[ 2024-12-19 ]
