News Trends
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【Domestic News】Professor Liu Bo's team from Tongji University：High-resistivity β-Ga₂O₃: Al single crystal and its X-ray detector Obtained by using the band-gap engineering
[ 2023-10-11 ] -
【Industry News】Gallium Oxide with Diversified Development
[ 2023-09-22 ] -
【World Express】Semiconductor Odoay Interprets the Study of an American Research Team on“Balancing charge to boost Ga₂O₃ breakdown beyond 10kV”
[ 2023-09-15 ] -
【Domestic News】Collection of Gallium Oxide Reports by Major Academies and Universities at the "2023 Power and Optoelectronic Semiconductor Device Design and Integration Application Forum" (2)
[ 2023-09-11 ] -
【World Express】KAUST researchers develop a tough memory device for space missions
[ 2023-08-25 ] -
【Domestic News】Collection of Gallium Oxide Reports by Major Academies and Universities at the "2023 Power and Optoelectronic Semiconductor Device Design and Integration Application Forum" (1)
[ 2023-08-25 ] -
【Domestic News】The research team of wide bandgap semiconductors at Nanjing University released the latest research results on gallium oxide in Nature Communications
[ 2023-08-18 ] -
【Industry News】The Future Potential of Gallium Oxide Promotes the Research Heat in the Academic Circle
[ 2023-08-18 ] -
【World Express】The research results of two American universities contribute to improving β- RF performance of Ga₂O₃ FET
[ 2023-08-18 ] -
【World Express】FLOSFIA —— A mass production system of 1 million pieces per month is to built for gallium oxide SBD with the world's smallest characteristic on resistance
[ 2023-08-11 ]
