Paper Sharing
-
【Epitaxy Papers】Fluorine-Doped N-Type α-Ga₂O₃ and Its Phase Stability
[ 2025-03-18 ] -
【Epitaxy Papers】Structural and spectroscopic properties of Hydrothermally Synthesized α-GaO(OH) Structures: Impact of Annealing Temperatures
[ 2025-03-18 ] -
【International Papers】Dielectric reliability and interface trap characterization in MOCVD grown in situ Al₂O₃ on β-Ga₂O₃
[ 2025-03-17 ] -
【Domestic Papers】β-Ga₂O₃ Thin Films via an Inorganic Sol–Gel Spin Coating: Preparation and Characterization
[ 2025-03-17 ] -
【International Papers】All-implanted lateral β-Ga₂O₃ MOSFET devices realized on semi-insulating (-201) β-Ga₂O₃ substrates
[ 2025-03-17 ] -
【Device Papers】Correlation between Experimental and Modeled Capacitance-Voltage Characteristics of Ga₂O₃ Schottky Barrier Diode in Temperature Range of 300 to 673K
[ 2025-03-17 ] -
【Device Papers】ε-Ga₂O₃ solar-blind photodetector: pyroelectric effect and flame sensing application
[ 2025-03-17 ] -
【Device Papers】Optimization of β-Ga₂O₃ Device Performance through Rare Earth Doping: Analysis of Stability, Electronic Structure, and Optical Properties
[ 2025-03-17 ] -
【Device Papers】Fast-response, self-powered staggered-gap p-CuGaO₂/β-Ga₂O₃ heterojunction for large-area diagnostic X-ray imaging applications
[ 2025-03-17 ] -
【Member Papers】Xidian University —— 3 kV fully vertical β-Ga₂O₃ junction termination extension Schottky barrier diode with sputtered p-GaN
[ 2025-03-13 ]
