Paper Sharing
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【Device Papers】Performance enhancement of asymmetric gate graded-AlGaN/GaN HEMT on β-Ga₂O₃ substrate for RF applications
[ 2025-07-25 ] -
【Device Papers】Self-aligned nitrogen doping via plasma treatment of NiO/β-Ga₂O₃ heterojunction diodes
[ 2025-07-25 ] -
【Device Papers】Nanometer-Thick Films of Cobalt Phthalocyanine/Indium–Gallium–Zinc Oxide Heterojunctions for Ultraviolet-Assisted Recoverable NO₂ Gas Sensors
[ 2025-07-25 ] -
【Member Papers】Phonon polariton in thin β-Ga₂O₃ crystal
[ 2025-07-24 ] -
【International Papers】Thickness dependence of optoelectronic properties of gallium oxide film deposited by electron beam evaporation technique
[ 2025-07-24 ] -
【Epitaxy Papers】Silicon Doping in Amorphous Gallium Oxide Films by Plasma-Enhanced Atomic Layer Deposition for Dielectric and Optoelectronic Applications
[ 2025-07-24 ] -
【Epitaxy Papers】Crystallinity and optical properties of post-annealed Ga₂O₃ thin films deposited under varying oxygen partial pressures
[ 2025-07-24 ] -
【Epitaxy Papers】Oxygen plasma-assisted pulsed laser deposition of terbium doped Ga₂O₃ films
[ 2025-07-24 ] -
【Domestic Papers】Isotropic performance of surface acoustic wave resonators based on ε-Ga₂O₃(001) thin films
[ 2025-07-23 ] -
【Domestic Papers】Fabrication and Ultraviolet Response Characteristics of All-Oxide Bi₂O₃/Ga₂O₃ Heterojunction
[ 2025-07-23 ]
