Paper Sharing
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【Device Papers】Ultrawide Bandgap Diamond/ε-Ga₂O₃ Heterojunction pn Diodes with Breakdown Voltages over 3 kV
[ 2025-02-11 ] -
【Device Papers】Vertical β-Ga₂O₃ Schottky Barrier Diode with the Composite Termination Structure
[ 2025-02-11 ] -
【Device Papers】Investigation of Interface, Border and Bulk Traps of Al₂O₃/β-Ga₂O₃ MOS Capacitors via O₂Plasma Treatment
[ 2025-02-11 ] -
【Member Papers】Yang Ming Chiao Tung University——Study of thermal annealing on gallium oxide heteroepitaxial layers grown on SiC for vertical Schottky barrier diodes applications
[ 2025-02-08 ] -
【Domestic Papers】Chongqing Institute of Green and Intelligent Technology——Advancements in Ga₂O₃-based heterojunction ultraviolet photodetectors: Types, fabrication techniques, and integrated materials for enhancing photoelectric conversion efficiency
[ 2025-02-08 ] -
【Device Papers】High-performance UV photodetector based on β-Ga₂O₃/GaN heterojunction prepared by a new route of reverse substitution growth
[ 2025-02-08 ] -
【Device Papers】High-performance InGaZnO/Ga₂O₃ heterostructure TFTs Gated by high-k Ta₁.₀La₀.₄O₃.₈ fabricated at room temperature
[ 2025-02-08 ] -
【Device Papers】Catalyst-Free Polymorphic β-Ga₂O₃ Nanomaterials for Solar-Blind Optoelectronic Devices: Applications in Imaging and Neural Communication
[ 2025-02-08 ] -
【Member Papers】Lu Xiaoli & He Yunlong et al.： The In-Situ Parasitic Microstructure Interface and Defect Formation Mechanism in (010) β-Ga₂O₃ Epitaxial Film via MOCVD
[ 2025-01-22 ] -
【Others Papers】Manipulating Oxygen Vacancies in γ-Ga₂O₃ Nanocrystals: Correlation between Defect Location, Charge State, and Photophysical Properties
[ 2025-01-22 ]
