Paper Sharing
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【International Papers】High-yield fabrication of high-performance β-Ga₂O₃ MOSFETs on a (010) 2″ substrate
[ 2026-04-23 ] -
【Device Papers】Surface plasmons regulate photon absorbance, photo response and carrier injection in Ga₂O₃ photodetectors
[ 2026-04-23 ] -
【Device Papers】Ga₂O₃-Based Power Devices: From Material Constraints to System Integration
[ 2026-04-23 ] -
【Device Papers】Self-powered UV photodetector based on type-II Be₀.₀₆Zn₀.₉₄O₀.₇₇S₀.₂₃/Ga₂O₃ heterojunction with dual built-in electric fields synergy
[ 2026-04-23 ] -
【Device Papers】An ultrahigh responsivity UV photodetector enabled by a spatially confined 2D β-Ga₂O₃/PdSe₂ van der Waals heterojunction
[ 2026-04-23 ] -
【Device Papers】Simulation Study on the Electrical Characteristics of New Composite Terminal Structure Lateral β-Ga₂O₃ Field-Effect Transistors
[ 2026-04-23 ] -
【Member Papers】The Growth and Characterization of 6‑inch (100) β‑Ga₂O₃ Single Crystals Grown by a Casting Method
[ 2026-04-22 ] -
【International Papers】Morphology investigation of metalorganic vapor phase epitaxy homoepitaxial (001) β-Ga₂O₃ growth on on-axis and 6° off-axis substrates
[ 2026-04-22 ] -
【Epitaxy Papers】Evolution of Ga₂O₃ Thin Film Properties with Nitrogen Doping Levels
[ 2026-04-22 ] -
【Device Papers】Performance improvement of ε-Ga₂O₃ solar-blind UV photodetector via an α-Ga₂O₃ buffer layer
[ 2026-04-22 ]
