Paper Sharing
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【Member Papers】High open-circuit voltage nuclear batteries enabled by integrated stacked p-diamond/n-Ga₂O₃ heterojunction
[ 2025-09-29 ] -
【Member Papers】Artificial Interfacial Quasi-Electric Field: A Pathway to Promote Ga₂O₃ Photodetectors
[ 2025-09-29 ] -
【Device Papers】Regulating oxygen vacancies to achieve stable non-volatile switching characteristics and neuromorphic computing in a-Ga₂O₃ based memristors
[ 2025-09-29 ] -
【Device Papers】Lattice parameters and elastic properties for strain analysis in κ-(InₓGa₁₋ₓ)₂O₃/κ-Ga₂O₃/Al₂O₃ heterostructures from density functional theory, x-ray diffraction, and scanning precession nanobeam electron diffraction
[ 2025-09-29 ] -
【Device Papers】Achieving Face-Selective Ohmic Contact to β-Ga₂O₃ via Anisotropic Trench Structure
[ 2025-09-29 ] -
【Member Papers】Structural and optical properties of high crystalline quality orthorhombic к-Ga₂O₃ heteroepitaxial films grown by HVPE
[ 2025-09-28 ] -
【Domestic Papers】Growth temperature dependent on the structure, device properties and carrier transport mechanisms of β-Ga₂O₃/GaAs heterojunctions
[ 2025-09-28 ] -
【Epitaxy Papers】Double epitaxial growth of ultra-stable Ga₂O₃/CsPbBr₃/CsGaSi₂O₆ heterostructure for multimodal applications
[ 2025-09-28 ] -
【Epitaxy Papers】Effects of terbium doping on the structural and optical properties of Ga₂O₃ films after high temperature annealing
[ 2025-09-28 ] -
【Epitaxy Papers】Plasma damage-free in situ etching of β-Ga₂O₃ using solid-source gallium in the LPCVD system
[ 2025-09-28 ]
