
Paper Sharing
-
【Others Papers】Photoluminescence and Raman spectroscopy of wide bandgap semiconductors damaged by deep-UV laser irradiation
[ 2024-12-19 ] -
【Member Papers】Northeast Normal University ——Dressing AgNWs with MXenes Nanosheets: Transparent Printed Electrodes Combining High-Conductivity and Tunable Work Function for High-Performance Opto-Electronics
[ 2024-12-17 ] -
【International Papers】Epilayer thickness effect on the electrical and breakdown characteristics of vertical β-Ga₂O₃ Schottky barrier diode
[ 2024-12-17 ] -
【Epitaxy Papers】Effect of different substrates on the structural, morphological, electrical, and optical properties of β-Ga₂O₃ thin films deposited by the sol-gel spin coating method
[ 2024-12-17 ] -
【Epitaxy Papers】A Strategy for Enhancing Interfacial Thermal Transport in Ga₂O₃-diamond Composite Structure by Introducing An AlN Interlayer
[ 2024-12-17 ] -
【Epitaxy Papers】Local Structure of Zn Dopant in β-Phase Ga₂O₃
[ 2024-12-17 ] -
【Device Papers】Fast switching Ga₂O₃ Schottky barrier power diode with beveled-mesa and BaTiO₃ field plate edge termination
[ 2024-12-17 ] -
【Device Papers】AlN/β-Ga₂O₃ HEMT for Low-Noise Amplifier
[ 2024-12-17 ] -
【Device Papers】Enhanced back-illuminated Ga₂O₃-based solar-blind ultraviolet photodetectors
[ 2024-12-17 ] -
【International Papers】Bipolar resistive switching behavior of bilayer β-Ga₂O₃/WO₃ thin film memristor device
[ 2024-12-13 ]