Member News
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【Member News】2026: A Pivotal Year for ε-Ga₂O₃
[ 2026-09-21 ] -
【Member News】Tanoxi Technology Achieves Key Breakthrough in (010)-Oriented Thick-Film Ga₂O₃ Epitaxy by MOCVD: High-Quality Thick Films Reach a Mobility of 160 cm²/V·s
[ 2026-09-20 ] -
【Member News】Shandong SINOGa Valley Semiconductor Breaks Bottleneck Barriers with Twin-Free Ga₂O₃ Technology, Reshaping the New Landscape of Solar-Blind Ultraviolet Detection
[ 2026-09-20 ] -
【Member News】Beijing Orient Semi Advances Ga₂O₃ Power Devices to Address Efficiency Challenges in Next-Generation PV Systems and Energy Storage PCS
[ 2026-09-17 ] -
【Member News】World’s First! Garen Semiconductor Achieves Constant-Diameter Growth of 12-Inch Ga₂O₃ Crystals
[ 2026-09-14 ] -
【Member News】GAREN and Partners’ Academic Achievements (I): Growth, Characterization, and Device Validation of Conductive Ga₂O₃ Substrates
[ 2026-09-11 ] -
【Member News】Back-to-School Season Mega Promotion | Fujia Gallium Kicks Off Gallium Oxide Product Promotion
[ 2026-09-10 ] -
【Member News】CNAS + CMA Dual Accreditation | Wonder-Sino Semiconductor Materials Testing Services Officially Launched
[ 2026-09-09 ] -
【Member News】Fujia Gallium Chairman Qi Hongji: Seed-Guided Growth Is the Optimal Path to Gallium Oxide Commercialization
[ 2026-09-07 ] -
【Member News】Breaking Through the Large-Size Epitaxy Barrier丨Shandong Liguang’s 8-Inch HVPE Equipment Enables the Next Generation of High-Voltage Gallium Oxide Devices
[ 2026-09-07 ]
