Paper Sharing
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【International Papers】O₂ sensors for λ-probe based on β-Ga₂O₃ microcrystals fabricated from к-Ga₂O₃ epitaxial film by thermal annealing
[ 2025-09-26 ] -
【Domestic Papers】Macro-defect-free homoepitaxial (100) β-Ga₂O₃ by MOVPE: Effect of Miscut angles
[ 2025-09-26 ] -
【Device Papers】Degradation of 2.4-kV Ga₂O₃ Schottky Barrier Diode at High Temperatures Up to 500 ℃
[ 2025-09-26 ] -
【Device Papers】Zn-doped Ga₂O₃ based two-terminal artificial synapses for neuromorphic computing applications
[ 2025-09-26 ] -
【Device Papers】Generalized thermal rectifier model with optimal thermal rectification ratio and its application to Ga₂O₃-based semiconductors
[ 2025-09-26 ] -
【Member Papers】Feasibility of p-type conduction in beta rhodium alloyed gallium oxide
[ 2025-09-25 ] -
【Member Papers】Enhanced β-Ga₂O₃ Schottky diode interface characteristics via low-temperature supercritical fluid technology
[ 2025-09-25 ] -
【International Papers】Gas-sensitive properties of PECVD nanocrystalline Ga₂O₃ thin films doped with Zn
[ 2025-09-25 ] -
【Member Papers】A novel single event effect radiation hardening design in β-Ga₂O₃ Schottky barrier diodes
[ 2025-09-24 ] -
【Domestic Papers】Bandgap nonlinearity and composition-dependent bowing in α-(AlₓGa₁₋ₓ)₂O₃ epilayers
[ 2025-09-24 ]
