Paper Sharing
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【International Papers】Observation of temperature-dependent capture cross section for main deep-levels in β-Ga₂O₃
[ 2024-12-30 ] -
【Epitaxy Papers】24-mA/mm metal–semiconductor field-effect transistor based on Ge-doped α-Ga₂O₃ grown by mist chemical vapor deposition
[ 2024-12-30 ] -
【Epitaxy Papers】Characteristics of β-Gallium Oxide Sputtering Etching by Focused Gallium Ion Beam in the Micro-Nano Scale Fabrication
[ 2024-12-30 ] -
【Epitaxy Papers】Mist CVD technology for gallium oxide deposition: A review
[ 2024-12-30 ] -
【Device Papers】Structure Engineering of Ga₂O₃ photodetectors: A Review
[ 2024-12-30 ] -
【Device Papers】Design and research of high voltage β-Ga₂O₃/4H-SiC heterojunction LDMOS
[ 2024-12-30 ] -
【Device Papers】High-Performance Ga₂O₃ Solar-Blind Photodetector Based on Thermal Oxidized Ga Buffer-Layer
[ 2024-12-30 ] -
【Member Papers】Towards atomic-scale smooth surface manufacturing of β-Ga₂O₃ via highly efficient atmospheric plasma etching
[ 2024-12-26 ] -
【International Papers】Cryogenic temperature operation of NiO/Ga₂O₃ heterojunction and Ni/Au Schottky rectifiers
[ 2024-12-26 ] -
【Device Papers】Huge photosensitivity gain combined with long photocurrent decay times in various polymorphs of Ga₂O₃: effects of carriers trapping with deep centers
[ 2024-12-26 ]
