
Member News
-
【Member News】Research Progress and Technical Planning of Ultra-Wide Bandgap Semiconductor Technology by the Research Team of Shenzhen Pinghu Laboratory
[ 2024-12-13 ] -
【Member News】Hangzhou Fujia Gallium Oxide Epitaxial Wafer Passed Two Rounds Device Verification, Has Significant International Competitive Advantages
[ 2024-12-09 ] -
【Member News】New Progress ︱ Hangzhou GAREN SEMI Realizes the Growth of 2 Inch N-Type Gallium Oxide Single Crystal by Czochralogon Method
[ 2024-12-02 ] -
【Member News】Shenzhen Pinghu Laboratory has Made Important Progress in Theoretical Research of Gallium Oxide
[ 2024-11-25 ] -
【Member News】Hangzhou Fujia Gallium Technology Participated in the Crystal Application and Industry Branch of Chinese Crystallographic Society again, Qi Hongji Researcher Shared the Perspective of Gallium Oxide Crystal Industrialization
[ 2024-11-19 ] -
【Member News】Shenzhen Pinghu Laboratory Invites You to Gather IFWS&SSLCHINA2024
[ 2024-11-19 ] -
【Member News】GAREN SEMI - New Fab | VB Method Crystal Growth Equipment Fully Move-In!
[ 2024-11-19 ] -
【Member News】HKUST Fok Ying Tung Research Institute Incubated Enterprise "Tanoxi Technology" Successfully Completed Millions of Angel Investment, Accelerate the Fourth-Generation Semiconductor Localization!
[ 2024-11-19 ] -
【Member News】GAO SEMI Invite You to Gather IFWS&SSLCHINA2024
[ 2024-11-11 ] -
【Member News】Breakthrough Progress in Fujia Gallium——Gallium Oxide Epitaxial Wafer Completes MOSFET Lateral Power Device Verification
[ 2024-10-31 ]