Paper Sharing
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【International Papers】Enhanced Device Characteristics of Hybrid-Channel (Poly-Si/IGO) Structures with Ga₂O₃ and Al₂O₃ Interlayers by Suppressing Oxidation-Induced Variability for Ultra-High-Density 3D NAND Flash Memory Applications
[ 2025-09-12 ] -
【Domestic Papers】The effect of O₂ high-temperature annealing on the quality of Al₂O₃/Ga₂O₃ interface
[ 2025-09-12 ] -
【Device Papers】Electro-thermal Co-design of High-power Vertical β-Ga₂O₃ Schottky Diodes with High-permittivity Dielectric Field-plate
[ 2025-09-12 ] -
【Device Papers】High power operating neuromorphic transistor based on F-doped β-Ga₂O₃ channel on Si wafers
[ 2025-09-12 ] -
【Device Papers】Analysis of the Temperature Dependence of the Capacitance of NiO/Ga₂O₃ Heterojunction Diodes Using Analytical and PSO Modelling
[ 2025-09-12 ] -
【Member Papers】Energy-band engineering and deep-ultraviolet photodetection of Ga₂O₃ alloys: a concise review
[ 2025-09-11 ] -
【Member Papers】Progress in β-Ga₂O₃ Vertical Power Devices Achieved by the Nano Fabrication Platform of Suzhou Institute of Nano-Tech and Nano-Bionics
[ 2025-09-11 ] -
【Domestic Papers】Tunable Superlinear Gallium Oxide Gate-All-Around Deep-Ultraviolet Phototransistor for Near-Field Imaging
[ 2025-09-10 ] -
【Member Papers】Optimizing transparency, conductivity, and luminescence in Eu-(Ga,In)₂O₃ thin films via oxygen pressure control
[ 2025-09-10 ] -
【International Papers】Design of CsSnBr₃/Ga₂O₃ Hybrid Photodetectors for High UV Selectivity and Bifacial Usage
[ 2025-09-10 ]
