Paper Sharing
-
【Member Papers】 Xi'an Jiaotong University —— Alloying and strain effect on the electron transport, mechanical, and optical properties of Ga₂O₃ monolayer: A first-principles investigation
[ 2025-03-07 ] -
【Member Papers】Xidian University Haoyue&Han Genquan Team —— Highly Stable Electronics Based on β-Ga₂O₃ for Advanced Memory Applications
[ 2025-03-07 ] -
【International Papers】κ/β-Ga₂O₃ Type-II Phase Heterojunction
[ 2025-03-07 ] -
【Domestic Papers】Nanjing University —— First principles investigation of electron mobility enhancement of β-Ga₂O₃ doped with indium
[ 2025-03-06 ] -
【International Papers】Electronic structure and properties of trapped holes in crystalline and amorphous Ga₂O₃
[ 2025-03-06 ] -
【Epitaxy Papers】Surface Quality Improvement Mechanism of ICP Etching for Ga₂O₃ Schottky Barrier Diode
[ 2025-03-06 ] -
【Epitaxy Papers】Top-Down Micro and Nano Structuring of Wide Bandgap Semiconductors for Ultraviolet Photodetection
[ 2025-03-06 ] -
【Epitaxy Papers】Spontaneous Donor Defects and Voltage-Assisted Hole Doping in Beta-Gallium Oxides under Multiple Epitaxy Conditions
[ 2025-03-06 ] -
【Domestic Papers】Researchers Led by Prof. Xutang Tao from the Shandong University——2-inch diameter (010) principal-face β-Ga₂O₃ single crystals grown by EFG method
[ 2025-03-04 ] -
【International Papers】Optimization of fin-slanted angles for enhanced electrical performance in lateral β-Ga₂O₃ MOSFETs
[ 2025-03-04 ]
