Paper Sharing
-
【Device Papers】Oxygen vacancy control engineering in Ga₂O₃/4H-SiC Schottky rectifiers
[ 2026-02-28 ] -
【Member Papers】Deciphering the mechanism of enhanced scintillation properties in In-doped β-Ga₂O₃ ultrafast scintillation crystal
[ 2026-02-27 ] -
【Epitaxy Papers】Growth of a-plane BaTiO₃ on a-plane β-Ga₂O₃ by molecular-beam epitaxy
[ 2026-02-27 ] -
【Epitaxy Papers】Bandgap Engineering of Ga₂O₃ by MOCVD Through Alloying with Indium
[ 2026-02-27 ] -
【International Papers】Two Kelvin Operation of Ultrawide-Bandgap Ga₂O₃ FinFETs and Logic Inverter Integrated Circuits
[ 2026-02-26 ] -
【Domestic Papers】Ultrahigh Responsivity β-Ga₂O₃ Solar-Blind Ultraviolet Photodetectors through In-situ Growth Pressure-Tuned Defect Engineering
[ 2026-02-26 ] -
【Others Papers】Optical Absorption and Emission in Nitrogen-Implanted Ga₂O₃ Controlled by Dynamic Defect Annealing
[ 2026-02-26 ] -
【Others Papers】Oxygen-Vacancy-Mediated Amorphous Ga₂O₃ for Neuromorphic Multicolor Image Sensor
[ 2026-02-26 ] -
【Device Papers】Photoconductive Gain Behavior of Ni/β-Ga₂O₃ Schottky Barrier Diode-Based UV Detectors
[ 2026-02-25 ] -
【Device Papers】Universal Ohmic contacts to β-Ga₂O₃ using interfacial dipoles of ultra-thin MgF₂ layer and related defect passivation
[ 2026-02-25 ]
