Paper Sharing
-

【Device Papers】The impact of interfacial chemistry on the band offset of GaAs/Ga₂O₃ heterostructures
[ 2026-10-22 ] -

【Member Papers】Orientation-dependent interface-state properties underlying the “V”-shaped difference in temperature-dependent reverse characteristics of [010]- and [100]-oriented trench-MOSSBDs
[ 2026-10-21 ] -

【International Papers】Flexible and Transparent Ga₂O₃/NiO Photovoltaic Diode for Full-Wave Rectification in Wearable Optoelectronics
[ 2026-10-21 ] -

【Domestic Papers】Synergistic photovoltaic-pyroelectric coupling in a Ga₂O₃/BaTiO₃ heterojunction for highly sensitive solar-blind ultraviolet photodetection
[ 2026-10-20 ] -

【International Papers】Copper–vacancy center in gallium oxide: A telecom quantum defect
[ 2026-10-20 ] -

【Device Papers】Modelling of FEOL and BEOL Amorphous Gallium Oxide-based Ferroelectric FETs with a Metal Interlayer for Multilevel Operation in Short Channel Devices
[ 2026-10-20 ] -

【Device Papers】TCAD investigation of β-Ga₂O₃ junction barrier Schottky diode with p-Cr₂O₃ heterojunction wells
[ 2026-10-20 ] -

【Device Papers】Fermi level pinning effect investigation on delafossite CuGaO₂/β-Ga₂O₃ heterojunction: application in UV-photodetectors
[ 2026-10-20 ] -

【Member Papers】First-principles insight into electrical characteristics of rhodium in vertical Bridgman-grown β-Ga₂O₃ with experimental validation
[ 2026-10-19 ] -

【Domestic Papers】Experimental observation of a fourfold difference in thermal conductivity yet comparable maximum phonon mean free path in α-alumina and α-gallium oxide
[ 2026-10-19 ]

